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Non-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics

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dc.contributor.authorBryushinin, M. A.
dc.contributor.authorSokolov, I. A.
dc.contributor.authorRomashko, R. V.
dc.contributor.authorZavestovskaya, I. N.
dc.contributor.authorKul'chin, Y. N.
dc.contributor.authorЗавестовская, Ирина Николаевна
dc.contributor.authorКульчин, Юрий Николаевич
dc.date.accessioned2024-11-21T17:32:46Z
dc.date.available2024-11-21T17:32:46Z
dc.date.issued2019
dc.description.abstract© 2019, Allerton Press, Inc.Non-stationary photovoltage excitation in silicon carbide and gallium oxide crystals is studied. The signal transient responses are measured, and the photoelectric parameters necessary for developing adaptive photodetectors, i.e., the specific photoconductivity, Maxwell relaxation time, and diffusion length of carrier transport, are determined. The sensitivity of the photodetector based on gallium oxide is determined.
dc.format.extentС. 387-389
dc.identifier.citationNon-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics / Bryushinin, M.A. [et al.] // Bulletin of the Lebedev Physics Institute. - 2019. - 46. - № 12. - P. 387-389. - 10.3103/S1068335619120054
dc.identifier.doi10.3103/S1068335619120054
dc.identifier.urihttps://www.doi.org/10.3103/S1068335619120054
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85078347824&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000512028100005
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19359
dc.relation.ispartofBulletin of the Lebedev Physics Institute
dc.titleNon-Stationary Photovoltage in Materials Science of Wide Band-Gap Semiconductors of Modern Adaptive Optics and Optoelectronics
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue12
oaire.citation.volume46
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