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Donor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer

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dc.contributor.authorSafonov, D. A.
dc.contributor.authorVinichenko, A. N.
dc.contributor.authorSibirmovsky, Yu. D.
dc.contributor.authorKargin, N. I.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorСафонов, Данил Андреевич
dc.contributor.authorВиниченко, Александр Николаевич
dc.contributor.authorСибирмовский, Юрий Дмитриевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorВасильевский, Иван Сергеевич
dc.date.accessioned2024-11-21T08:24:14Z
dc.date.available2024-11-21T08:24:14Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. A comparison of the electron transport properties of pseudomorphic quantum well AlxGa1-xAs/In0.2Ga0.8As/GaAs with those of conventional donor layer (x = 0.15 and x = 0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs layers exhibit electron concentration decrease, combined with increased electron mobility. This effect is related to the suppression of remote ionized impurity electron scattering, change of band structure and decreasing efficiency of silicon atoms doping when incorporating in pure AlAs.
dc.identifier.citationDonor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer / Safonov, D.A. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012031
dc.identifier.doi10.1088/1757-899X/498/1/012031
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012031
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065585743&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800031
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17955
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleDonor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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