Publication: Modeling of polygonal half-loops dislocations in silicon single crystal using X-ray diffraction topo-tomography data
Дата
2021
Авторы
Konarev, P. V.
Zolotov, D. A.
Buzmakov, A. V.
Grigoriev, V. A.
Григорьев, Владислав Анатольевич
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© 2021 Institute of Physics Publishing. All rights reserved.Topo-tomographic methods for identifying defects in semiconductors are the most effective among X-ray methods. Combining experimental data with model calculations makes it possible to determine various parameters and properties of crystal structures. In this work, using X-ray diffraction topo-tomography, images of the dislocation half-loop in Si (111) crystal were obtained. The Takagi-Taupin equations have been used to modeling the topograms. A quantitative comparison of the images made it possible to determine the direction of the Burgers vector.
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Modeling of polygonal half-loops dislocations in silicon single crystal using X-ray diffraction topo-tomography data / Konarev, P.V. [et al.] // Journal of Physics: Conference Series. - 2021. - 2036. - № 1. - 10.1088/1742-6596/2036/1/012015