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Static and dynamic oxide-Trapped-charge-induced variability in nanoscale CMOS circuits

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dc.contributor.authorZebrev, G.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-21T08:44:41Z
dc.date.available2024-11-21T08:44:41Z
dc.date.issued2019
dc.description.abstract© 1963-2012 IEEE. The interdevice mismatch and intradevice temporal instability in the nanoscale CMOS circuits is examined from a unified point of view as a static and dynamic parts of the variability concerned with stochastic oxide charge trapping and detrapping. This approach has been benchmarked on the recent evidence of the radiation-induced increase of intertransistor mismatch in 60-nm ICs. A possible reliability limitation in ultrascale circuits concerned with the single or a few charged defect instability is pointed out and estimated.
dc.format.extentС. 2483-2488
dc.identifier.citationZebrev, G. Static and dynamic oxide-Trapped-charge-induced variability in nanoscale CMOS circuits / Zebrev, G. // IEEE Transactions on Electron Devices. - 2019. - 66. - № 6. - P. 2483-2488. - 10.1109/TED.2019.2907816
dc.identifier.doi10.1109/TED.2019.2907816
dc.identifier.urihttps://www.doi.org/10.1109/TED.2019.2907816
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065984369&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468228100002
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18054
dc.relation.ispartofIEEE Transactions on Electron Devices
dc.titleStatic and dynamic oxide-Trapped-charge-induced variability in nanoscale CMOS circuits
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue6
oaire.citation.volume66
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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