Publication:
Calibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures

Простая страница элемента
dc.contributor.authorAnashin, V. S.
dc.contributor.authorZimin, P. A.
dc.contributor.authorMrozovskaya, E. V.
dc.contributor.authorChubunov, P. A.
dc.contributor.authorZebrev, G. I.
dc.contributor.authorМрозовская, Елизавета Владимировна
dc.contributor.authorЧубунов, Павел Александрович
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-21T09:42:00Z
dc.date.available2024-11-21T09:42:00Z
dc.date.issued2019
dc.description.abstract© 2019 Elsevier B.V.This paper describes the radiation response and I-V characteristics of the stacked p-MNOS based RADFETs measured at different dose rates and irradiation temperatures. It is shown that the enhanced charge trapping takes place at the interface of the thick gate dielectrics in the MNOS transistors at low dose rates (ELDRS). The sensitivity of the radiation effect to irradiation temperature has also experimentally revealed. We associate both effects with the temperature and dose rate dependence of the effective charge yield in the thick oxides described within the framework of the previously proposed model. We have also simulated the I-V characteristics of the transistors for different total doses and irradiation conditions. It has been found the used electric and radiation models qualitatively and semi-quantitatively describe the observed dependencies of the RADFETs’ sensitivity on dose rates and irradiation temperatures for the devices with different thickness of insulators.
dc.format.extentС. 307-312
dc.identifier.citationCalibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures / Anashin, V.S. [et al.] // Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. - 2019. - 940. - P. 307-312. - 10.1016/j.nima.2019.05.099
dc.identifier.doi10.1016/j.nima.2019.05.099
dc.identifier.urihttps://www.doi.org/10.1016/j.nima.2019.05.099
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85067872027&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000475349600043
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18277
dc.relation.ispartofNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
dc.titleCalibration and electric characterization of p-MNOS RADFETs at different dose rates and temperatures
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume940
relation.isAuthorOfPublicationa8412981-4b8c-4a86-90fc-af6455c61ddf
relation.isAuthorOfPublication17cb37ba-7e66-4ec0-b5f4-85e833303ac2
relation.isAuthorOfPublication480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
relation.isAuthorOfPublication.latestForDiscoverya8412981-4b8c-4a86-90fc-af6455c61ddf
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
Файлы
Original bundle
Теперь показываю 1 - 1 из 1
Уменьшенное изображение
Name:
W2950852362.pdf
Size:
1.91 MB
Format:
Adobe Portable Document Format
Description:
Download
Коллекции
Публикации