Publication:
Features of Pulsed Laser Annealing of BC3 Films on a Sapphire Substrate

Простая страница элемента
dc.contributor.authorZinin, P. V.
dc.contributor.authorFilonenko, V. P.
dc.contributor.authorFominski, V. Y.
dc.contributor.authorRomanov, R. I.
dc.contributor.authorSolov'ev, A. A.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorSafonov, D. A.
dc.contributor.authorIvanov, A. A.
dc.contributor.authorФоминский, Вячеслав Юрьевич
dc.contributor.authorРоманов, Роман Иванович
dc.contributor.authorСоловьев, Алексей
dc.contributor.authorВасильевский, Иван Сергеевич
dc.contributor.authorСафонов, Данил Андреевич
dc.contributor.authorИванов, Андрей Анатольевич
dc.date.accessioned2024-11-21T09:35:13Z
dc.date.available2024-11-21T09:35:13Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd.Abstract: The morphology, chemical composition, microstructure, and electrical properties of BC3 thin films subjected to melting by a nanosecond laser pulse are investigated. The original films have been created by pulsed laser codeposition of B and C onto a sapphire substrate at 150 and 350°C. Morphological changes in the films depended on their initial structural state. However, a “frozen” structure of both films after irradiation corresponded to the B-saturated graphite-like phase, the local composition of which varied due to the formation of inclusions of amorphous boron carbide. Before and after irradiation, the films exhibited a slightly decreasing dependence of the surface resistance with increasing temperature from 4.2 to 330 K. After laser irradiation, the films resistance has decreased by a factor of ~2.6.
dc.format.extentС. 446-449
dc.identifier.citationFeatures of Pulsed Laser Annealing of BC3 Films on a Sapphire Substrate / Zinin, P.V. [et al.] // Technical Physics Letters. - 2019. - 45. - № 5. - P. 446-449. - 10.1134/S1063785019050055
dc.identifier.doi10.1134/S1063785019050055
dc.identifier.urihttps://www.doi.org/10.1134/S1063785019050055
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85067296248&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000471652200008
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18254
dc.relation.ispartofTechnical Physics Letters
dc.titleFeatures of Pulsed Laser Annealing of BC3 Films on a Sapphire Substrate
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue5
oaire.citation.volume45
relation.isAuthorOfPublication852bb7e8-70ac-4cdc-a118-f1943d8a0fba
relation.isAuthorOfPublication5955ca45-4f76-4aee-a4c1-aeb5d68abfca
relation.isAuthorOfPublication5055b31e-3c41-4e09-981e-73b812518598
relation.isAuthorOfPublication8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isAuthorOfPublication82e59a49-b32c-4996-a1e5-25f94c444179
relation.isAuthorOfPublicationc64f5c02-8152-45cb-9106-892b0b07b0da
relation.isAuthorOfPublication.latestForDiscovery852bb7e8-70ac-4cdc-a118-f1943d8a0fba
relation.isOrgUnitOfPublicationdcdb137c-0528-46a5-841b-780227a67cce
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscoverydcdb137c-0528-46a5-841b-780227a67cce
Файлы
Коллекции
Публикации