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Nonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring

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dc.contributor.authorMoskovskaya, Y. M.
dc.contributor.authorSogojan, A. V.
dc.contributor.authorNikiforov, A. Y.
dc.contributor.authorBogdanov, Y. I.
dc.contributor.authorBogdanova, N. A.
dc.contributor.authorFastovets, D. V.
dc.contributor.authorMoskovskaya, Y. M.
dc.contributor.authorSogoyan, A. V.
dc.contributor.authorNikiforov, A. Y.
dc.contributor.authorМосковская, Юлия Марковна
dc.contributor.authorСогоян, Армен Вагоевич
dc.contributor.authorНикифоров, Александр Юрьевич
dc.date.accessioned2024-11-21T14:56:31Z
dc.date.available2024-11-21T14:56:31Z
dc.date.issued2019
dc.description.abstract© 2019 IEEE.Nonparametric statistical criteria usage has been considered for estimating radiation hardness threshold variation of CMOS IC wafer lots series. It gives one the possibility to assess every newly manufactured IC lot by a small sample size to determine whether test sample and the whole lot statistically belong to the previously tested general reference group of samples or not. The approach allows us to minimize the overirradiation factor and obtain a statistically reliable radiation test result even for small-size test samples.
dc.format.extentС. 193-196
dc.identifier.citationNonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring / Moskovskaya, Y.M. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 193-196. - 10.1109/MIEL.2019.8889642
dc.identifier.doi10.1109/MIEL.2019.8889642
dc.identifier.urihttps://www.doi.org/10.1109/MIEL.2019.8889642
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075357422&origin=resultslist
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18917
dc.relation.ispartof2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
dc.titleNonparametric Statistical Analysis of Radiation Hardness Threshold Variation in CMOS IC Wafer Lots Series with the Aim of Process Monitoring
dc.typeConference Paper
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