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Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Alx Ga1- x As/Aly Ga1- y As heterostructure with optical and electron beam pumping

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dc.contributor.authorSkasyrsky, Ya. K.
dc.contributor.authorAndreev, A. Yu.
dc.contributor.authorYarotskaya, I. V.
dc.contributor.authorMarmalyuk, A. A.
dc.contributor.authorButaev, M. R.
dc.contributor.authorKozlovsky, V. I.
dc.contributor.authorКозловский, Владимир Иванович
dc.date.accessioned2024-12-26T11:38:24Z
dc.date.available2024-12-26T11:38:24Z
dc.date.issued2022
dc.description.abstract© 2022 Kvantovaya Elektronika and IOP Publishing Limited.A pulsed semiconductor disk laser based on the Al x Ga1 - x As/Al y Ga1 - y As structure with resonantly periodic gain and a built-in Bragg mirror emitting at a wavelength near 780 nm is studied. The laser characteristics are presented both for pumping by an electron beam and for optical pumping by laser diode radiation with a wavelength of 450 nm. Under pumping by an electron beam, a peak power of 4.4 W is achieved with a slope efficiency of over 10 %, while under optical pumping, the power is 0.2 W with a slope efficiency of 2.2 % and approximately the same cavity parameters. Possible reasons for the lower powers and efficiency under optical pumping are discussed.
dc.format.extentС. 362-366
dc.identifier.citationSemiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Alx Ga1- x As/Aly Ga1- y As heterostructure with optical and electron beam pumping / Skasyrsky, Ya.K. [et al.] // Quantum Electronics. - 2022. - 52. - № 4. - P. 362-366. - 10.1070/QEL18017
dc.identifier.doi10.1070/QEL18017
dc.identifier.urihttps://www.doi.org/10.1070/QEL18017
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85128694762&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000830959200010
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/29036
dc.relation.ispartofQuantum Electronics
dc.titleSemiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown Alx Ga1- x As/Aly Ga1- y As heterostructure with optical and electron beam pumping
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue4
oaire.citation.volume52
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