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Application of the ion mixing method for doping near surface layers of the silicon single crystals

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dc.contributor.authorVolkov, N.
dc.contributor.authorKalin, B.
dc.contributor.authorVoronov, Y. u.
dc.contributor.authorPershenkov, V.
dc.contributor.authorВоронов, Юрий Александрович
dc.date.accessioned2024-11-21T08:26:25Z
dc.date.available2024-11-21T08:26:25Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. Penetration of alien atoms (Be, Al, Ni, Mo) into Si, diamond monocrystals substrates was investigated under Ar + ion bombardment of samples having thermally evaporated films of 30-50 nm. Sputtering was carried out using a wide energy spectrum beam of Ar + ions with mean energy 9.4 keV to dose D = 1×10 16 -10 19 ion/cm 2 . Implanted atom distribution in the targets was measured by Rutherford backscattering spectrometry (RBS) of H + and He + ions with start energy of 1.6 MeV as well as secondary ion mass-spectrometry (SIMS). During the bombardment, the penetration depth of Ar atoms increases with dose linearly. This depth is more than 3-20 times deeper than the projected range of bombarding ions and recoil atoms. This is a "ion mixing" process. The analysis shows that the experimental data for foreign atoms penetration depth are similar to the data calculated for atom migration through the interstitial site in a field of internal (lateral) compressive stresses created in the near-surface layer of the substrate as a result of implantation. Under these experimental conditions atom ratio r i /r m (r i - radius of dopant atom, r m - radius of substrate atom) can play a principal determining role. Show that maximum penetration depth of the film atoms in the substrates may be determine by "isotropic model" under ion beam (with wide energy spectrum - polyenergy) irradiation of the "film-substrate" systems too.
dc.identifier.citationApplication of the ion mixing method for doping near surface layers of the silicon single crystals / Volkov, N. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012025
dc.identifier.doi10.1088/1757-899X/498/1/012025
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012025
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065562342&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800025
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17967
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleApplication of the ion mixing method for doping near surface layers of the silicon single crystals
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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