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Methodical Approach for SEL Tolerance Confirmation of CMOS ICs at Low Temperatures

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dc.contributor.authorNovikova, M. M.
dc.contributor.authorNovikov, A. A.
dc.contributor.authorPechenkin, A. A.
dc.contributor.authorLukashin, V. P.
dc.contributor.authorOblova, E. N.
dc.contributor.authorGritsaenko, A. R.
dc.contributor.authorProtasov, D. E.
dc.contributor.authorTararaksin, A. S.
dc.contributor.authorПеченкин, Александр Александрович
dc.contributor.authorЛукашин, Владислав Павлович
dc.contributor.authorГрицаенко, Альбина Радиковна
dc.contributor.authorПротасов, Дмитрий Евгеньевич
dc.contributor.authorТарараксин, Александр Сергеевич
dc.date.accessioned2024-11-30T04:07:28Z
dc.date.available2024-11-30T04:07:28Z
dc.date.issued2021
dc.description.abstractAn approach for SEL sensitivity estimation using heavy ions at room temperature and laser facilities both at room and subzero temperatures is proposed. The results of comparison approach approbation are also presented. © 2021 IEEE.
dc.identifier.citationMethodical Approach for SEL Tolerance Confirmation of CMOS ICs at Low Temperatures / Novikova, M.M. [et al.] // RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems. - 2021. - 10.1109/RADECS53308.2021.9954467
dc.identifier.doi10.1109/RADECS53308.2021.9954467
dc.identifier.urihttps://www.doi.org/10.1109/RADECS53308.2021.9954467
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85143913693&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/25427
dc.relation.ispartofRADECS 2021 - European Conference on Radiation and its Effects on Components and Systems
dc.subjectHeavy ions
dc.subjectLaser technique
dc.subjectLow temperature
dc.subjectSEL
dc.titleMethodical Approach for SEL Tolerance Confirmation of CMOS ICs at Low Temperatures
dc.typeConference Paper
dspace.entity.typePublication
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