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Low temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition

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dc.contributor.authorDanilyuk, A. L.
dc.contributor.authorPrischepa, S. L.
dc.contributor.authorTrafimenko, A. G.
dc.contributor.authorFedotov, A. K.
dc.contributor.authorKargin, N. I.
dc.contributor.authorПрищепа, Сергей Леонидович
dc.contributor.authorКаргин, Николай Иванович
dc.date.accessioned2024-11-25T17:01:20Z
dc.date.available2024-11-25T17:01:20Z
dc.date.issued2020
dc.description.abstractWe report on the electric transport properties of Si heavily doped with Sb at concentration just below the insulator-to-metal transition in the temperature range 1.9-3.0 K for current density J < 0.2 A cm(-2). The change in the sign of the temperature dependence of the differential resistivity was observed: the d/dT is positive if J < 0.045 A cm(-2) whereas it becomes negative at J > 0.045 A cm(-2). The effect is explained assuming the exchange by electrons between the upper Hubbard band (UHB) and the conduction band. The obtained J dependencies of the activation energy, nonequilibrium concentration, mobility and scattering time of the conduction electrons correspond well to this hypothesis. The reason for charge instability is the Coulomb repulsion between electrons occupying states both in the UHB and conduction band. The estimated J dependencies of the conduction electrons lifetime and concentration of the D- states in the UHB strongly supports this assumption.
dc.identifier.citationLow temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition / Danilyuk, AL [et al.] // Journal of Physics Condensed Matter. - 2020. - 32. - № 22. - 10.1088/1361-648X/ab720e
dc.identifier.doi10.1088/1361-648X/ab720e
dc.identifier.urihttps://www.doi.org/10.1088/1361-648X/ab720e
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85082658596&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000518918500001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20404
dc.relation.ispartofJournal of Physics Condensed Matter
dc.titleLow temperature injected-caused charge carrier instability in n-type silicon below insulator-to-metal transition
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue22
oaire.citation.volume32
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