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Influence of X-ray Source Spectrum on TID Degradation of CMOS Devices

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dc.contributor.authorTeplyakova, A. O.
dc.contributor.authorEgorov, A. Y.
dc.contributor.authorKalashnikov, V. D.
dc.contributor.authorUlanova, A. V.
dc.contributor.authorMarfin, V. A.
dc.contributor.authorRogovaia, M. A.
dc.contributor.authorКалашников, Владислав Дмитриевич
dc.contributor.authorУланова, Анастасия Владиславовна
dc.date.accessioned2024-12-25T16:01:03Z
dc.date.available2024-12-25T16:01:03Z
dc.date.issued2022
dc.description.abstract© 2022 IEEE.The paper presents an evaluation of degradation of parameters of CMOS devices under x-ray irradiation with different spectra. Using aluminum filters of different thicknesses and various operating modes of the X-ray facility the low-energy part of X-ray spectrum was attenuated. The obtained data indicates that the modification of the X-ray energy spectrum affects ionizing radiation response of CMOS ICs parameters. A quantitative assessment of the difference in the radiation behavior of IC's parameters is given. A hypothesis that can explain the cause of difference in parameter degradation is put forward.
dc.identifier.citationInfluence of X-ray Source Spectrum on TID Degradation of CMOS Devices / Teplyakova, A.O. [et al.] // Moscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings. - 2022. - 10.1109/MWENT55238.2022.9802295
dc.identifier.doi10.1109/MWENT55238.2022.9802295
dc.identifier.urihttps://www.doi.org/10.1109/MWENT55238.2022.9802295
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85134029209&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28133
dc.relation.ispartofMoscow Workshop on Electronic and Networking Technologies, MWENT 2022 - Proceedings
dc.titleInfluence of X-ray Source Spectrum on TID Degradation of CMOS Devices
dc.typeConference Paper
dspace.entity.typePublication
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relation.isAuthorOfPublication.latestForDiscovery15181520-9f5d-4a9a-bc91-d523ec653879
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