Publication:
Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor

dc.contributor.authorTsunvaza, D.
dc.contributor.authorRyzhuk, R. V.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorKargin, N. I.
dc.contributor.authorKlokov, V. A.
dc.contributor.authorЦунваза, Дамир
dc.contributor.authorРыжук, Роман Валериевич
dc.contributor.authorВасильевский, Иван Сергеевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorКлоков, Владимир Александрович
dc.date.accessioned2024-12-28T11:54:58Z
dc.date.available2024-12-28T11:54:58Z
dc.date.issued2023
dc.format.extentС. 160-166
dc.identifier.citationDesign of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor / Tsunvaza, D. [et al.] // Russian Microelectronics. - 2023. - 52. - № 3. - P. 160-166. - 10.1134/S1063739723700415
dc.identifier.doi10.1134/S1063739723700415
dc.identifier.urihttps://www.doi.org/10.1134/S1063739723700415
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85163960650&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/30247
dc.relation.ispartofRussian Microelectronics
dc.titleDesign of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue3
oaire.citation.volume52
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