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SnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor

dc.contributor.authorSamotaev, N.
dc.contributor.authorOblov, K.
dc.contributor.authorLitvinov, A.
dc.contributor.authorEtrekova, M.
dc.contributor.authorСамотаев, Николай Николаевич
dc.contributor.authorОблов, Константин Юрьевич
dc.contributor.authorЛитвинов, Артур Васильевич
dc.contributor.authorЭтрекова, Майя Оразгельдыевна
dc.date.accessioned2024-11-21T14:52:23Z
dc.date.available2024-11-21T14:52:23Z
dc.date.issued2019
dc.description.abstract© 2019 IEEE.The article describes the result of the use SnO2-Pd thin films as a gate for structure measured ppb range of NO2 gas by the capacitive method. The technological aspects of fabrication SnO2-Pd gate and one comparison by metrological parameters with the classical Pd gate field effect sensor are discussed. The use of SnO2-Pd material allows improvement in sensitivity of NO2 by an order of magnitude compare the classical Pd based gate field effect sensors.
dc.format.extentС. 153-156
dc.identifier.citationSnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor / Samotaev, N. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 153-156. - 10.1109/MIEL.2019.8889648
dc.identifier.doi10.1109/MIEL.2019.8889648
dc.identifier.urihttps://www.doi.org/10.1109/MIEL.2019.8889648
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075392446&origin=resultslist
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18900
dc.relation.ispartof2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
dc.titleSnO2-Pd as a Gate Material for the Capacitor Type Gas Sensor
dc.typeConference Paper
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