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Nanosecond semiconductor disk laser emitting at 496.5 nm

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dc.contributor.authorSkasyrsky, Ya. K.
dc.contributor.authorButaev, M. R.
dc.contributor.authorKozlovsky, V. I.
dc.contributor.authorКозловский, Владимир Иванович
dc.date.accessioned2024-11-27T08:44:26Z
dc.date.available2024-11-27T08:44:26Z
dc.date.issued2020
dc.description.abstract© 2020 Kvantovaya Elektronika and IOP Publishing LimitedAn optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N2 laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7 %. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power.
dc.format.extentС. 895-899
dc.identifier.citationSkasyrsky, Ya. K. Nanosecond semiconductor disk laser emitting at 496.5 nm / Skasyrsky, Ya.K., Butaev, M.R., Kozlovsky, V.I. // Quantum Electronics. - 2020. - 50. - № 10. - P. 895-899. - 10.1070/QEL17387
dc.identifier.doi10.1070/QEL17387
dc.identifier.urihttps://www.doi.org/10.1070/QEL17387
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85092437958&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000576460000001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/22452
dc.relation.ispartofQuantum Electronics
dc.titleNanosecond semiconductor disk laser emitting at 496.5 nm
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue10
oaire.citation.volume50
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