Publication:
Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates

Простая страница элемента
dc.contributor.authorGaliev, G. B.
dc.contributor.authorVasiliev, A. L.
dc.contributor.authorKlimov, E. A.
dc.contributor.authorKlochkov, A. N.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorVinichenko, A. N.
dc.contributor.authorВасильевский, Иван Сергеевич
dc.contributor.authorВиниченко, Александр Николаевич
dc.date.accessioned2024-11-26T13:51:48Z
dc.date.available2024-11-26T13:51:48Z
dc.date.issued2020
dc.description.abstract© 2020, Pleiades Publishing, Inc.Abstract: The structural characteristics of {InGaAs/InAlAs} superlattices, grown by molecular-beam epitaxy (MBE) at a temperature of 200°C on InP substrates with the crystallographic orientations (100) and (111)A, have been investigated. The superlattices consist of 100 periods of alternating In0.53Ga0.47As and In0.52Al0.48As layers with nominal thicknesses of 12 and 8 nm, respectively. The structural quality of the samples has been investigated by transmission electron microscopy (TEM). It is shown that the superlattice on the InP(100) substrate is single-crystal with high concentration of stacking faults, twins, and small-angle domains. The superlattice on the InP(111)A substrate is polycrystalline; however, the grown layers can be traced throughout almost the entire superlattice. A wave-like curvature of the layers grown on the InP(111)A substrate is much larger than that of the layers grown on the InP(100) substrate: the angular ranges of layer deviation from the horizontal growth plane reach ±30° and ±18°, respectively.
dc.format.extentС. 496-501
dc.identifier.citationStructural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates / Galiev, G.B. [et al.] // Crystallography Reports. - 2020. - 65. - № 3. - P. 496-501. - 10.1134/S1063774520030104
dc.identifier.doi10.1134/S1063774520030104
dc.identifier.urihttps://www.doi.org/10.1134/S1063774520030104
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85085479607&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000536643700034
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/21857
dc.relation.ispartofCrystallography Reports
dc.titleStructural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue3
oaire.citation.volume65
relation.isAuthorOfPublication8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isAuthorOfPublication635fa0fa-6e40-44e3-ba36-c309ec64c497
relation.isAuthorOfPublication.latestForDiscovery8ce84220-3c34-4278-83e7-c79be7660fe9
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
Файлы
Коллекции
Публикации