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Performance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta 2 O 5 -SiO 2 -Si Structure During Long-Term Operation

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dc.contributor.authorKovalenko, A.
dc.contributor.authorPodlepetsky, B.
dc.contributor.authorSamotaev, N.
dc.contributor.authorNikiforova, M.
dc.contributor.authorПодлепецкий, Борис Иванович
dc.contributor.authorСамотаев, Николай Николаевич
dc.date.accessioned2024-11-21T08:14:00Z
dc.date.available2024-11-21T08:14:00Z
dc.date.issued2019
dc.description.abstractWe present the generalized experimental results of performance degradation of hydrogen sensors based on metal-insulator-semiconductor field effect transistor (MISFET)with the structure Pd-Ta2O5-SiO2-Si. The n-channel MISFET elements were fabricated on silicon single chips together with temperature sensors and heater-resistors by means of conventional -technology. Two hundred cycles of responses to different hydrogen concentrations were measured during eight weeks using special measuring and temperature stabilization circuitries with a feedback loop based on the chip's thermo-sensor and heater. We show how the response parameters change during long-term tests of sensors under repeated hydrogen impacts. There were two stages of time-dependent response instability, the degradation of which depends on operating conditions, hydrogen concentrations, and time. To interpret results, we proposed the models, parameters of which were calculated using experimental data. These models can be used to predict performances of MISFET-based gas analysis devices for long-term operation.
dc.identifier.citationPerformance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta 2 O 5 -SiO 2 -Si Structure During Long-Term Operation / Kovalenko, A. [et al.] // Sensors (Switzerland). - 2019. - 19. - № 8. - 10.3390/s19081855
dc.identifier.doi10.3390/s19081855
dc.identifier.urihttps://www.doi.org/10.3390/s19081855
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065079864&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000467644500109
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17898
dc.relation.ispartofSensors (Switzerland)
dc.titlePerformance Degradations of MISFET-Based Hydrogen Sensors with a Pd-Ta 2 O 5 -SiO 2 -Si Structure During Long-Term Operation
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue8
oaire.citation.volume19
relation.isAuthorOfPublication11795ead-c59a-47cf-bae1-ccbff5788e69
relation.isAuthorOfPublication0004cf07-4071-427a-8a4b-df33706477ca
relation.isAuthorOfPublication.latestForDiscovery11795ead-c59a-47cf-bae1-ccbff5788e69
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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