Publication:
Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

dc.contributor.authorTorkhov, N. A.
dc.contributor.authorGradoboev, A. V.
dc.contributor.authorToropov, A. S.
dc.contributor.authorOrlova, K. N.
dc.contributor.authorОрлова, Ксения Николаевна
dc.date.accessioned2024-12-25T13:25:34Z
dc.date.available2024-12-25T13:25:34Z
dc.date.issued2022
dc.description.abstract© 2022 IOP Publishing Ltd.The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R SH, R SK, ρ and geometrical parameter L T on the LTLM test line width Wk . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.
dc.identifier.citationPhysical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures / Torkhov, N.A. [et al.] // Semiconductor Science and Technology. - 2022. - 37. - № 5. - 10.1088/1361-6641/ac557e
dc.identifier.doi10.1088/1361-6641/ac557e
dc.identifier.urihttps://www.doi.org/10.1088/1361-6641/ac557e
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85128915141&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000782265400001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/27873
dc.relation.ispartofSemiconductor Science and Technology
dc.titlePhysical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue5
oaire.citation.volume37
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