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Emerging resistive random-access memory for ‘fog’ computing and IoT: Materials and structural options taxonomy

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dc.contributor.authorLapshinsky, V. A.
dc.contributor.authorPatrikeev, L. N.
dc.contributor.authorЛапшинский, Валерий Алексеевич
dc.date.accessioned2024-11-21T18:31:31Z
dc.date.available2024-11-21T18:31:31Z
dc.date.issued2019
dc.description.abstractCopyright © 2019 Inderscience Enterprises Ltd.The emergence of resistive random-access memory (ReRAM) die and fog computing plus internet-of-things (IoT) has given rise to the need for developing memristive memory elements structure and material conductance mechanisms taxonomy for ReRAM. In this paper, we review those aspects, including nanoparticles (metallic, bimetallic, etc.), graphene and other carbon-based materials and structures and related 2D materials. The corresponding taxonomies are presented in this paper, which can help to find new materials, optimal values of technological parameters, optimise the structure and maximise the efficiency ReRAM for emerging applications.
dc.format.extentС. 421-435
dc.identifier.citationLapshinsky, V. A. Emerging resistive random-access memory for ‘fog’ computing and IoT: Materials and structural options taxonomy / Lapshinsky, V.А., Patrikeev, L.N. // International Journal of Nanotechnology. - 2019. - 16. - № 6-10. - P. 421-435. - 10.1504/IJNT.2019.106616
dc.identifier.doi10.1504/IJNT.2019.106616
dc.identifier.urihttps://www.doi.org/10.1504/IJNT.2019.106616
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85083891261&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000528664000011
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19523
dc.relation.ispartofInternational Journal of Nanotechnology
dc.titleEmerging resistive random-access memory for ‘fog’ computing and IoT: Materials and structural options taxonomy
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue6-10
oaire.citation.volume16
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