Publication: Emerging resistive random-access memory for ‘fog’ computing and IoT: Materials and structural options taxonomy
Дата
2019
Авторы
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
Copyright © 2019 Inderscience Enterprises Ltd.The emergence of resistive random-access memory (ReRAM) die and fog computing plus internet-of-things (IoT) has given rise to the need for developing memristive memory elements structure and material conductance mechanisms taxonomy for ReRAM. In this paper, we review those aspects, including nanoparticles (metallic, bimetallic, etc.), graphene and other carbon-based materials and structures and related 2D materials. The corresponding taxonomies are presented in this paper, which can help to find new materials, optimal values of technological parameters, optimise the structure and maximise the efficiency ReRAM for emerging applications.
Описание
Ключевые слова
Цитирование
Lapshinsky, V. A. Emerging resistive random-access memory for ‘fog’ computing and IoT: Materials and structural options taxonomy / Lapshinsky, V.А., Patrikeev, L.N. // International Journal of Nanotechnology. - 2019. - 16. - № 6-10. - P. 421-435. - 10.1504/IJNT.2019.106616
URI
https://www.doi.org/10.1504/IJNT.2019.106616
https://www.scopus.com/record/display.uri?eid=2-s2.0-85083891261&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000528664000011
https://openrepository.mephi.ru/handle/123456789/19523
https://www.scopus.com/record/display.uri?eid=2-s2.0-85083891261&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000528664000011
https://openrepository.mephi.ru/handle/123456789/19523