Publication: Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires
Дата
2019
Авторы
Journal Title
Journal ISSN
Volume Title
Издатель
Аннотация
Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100 nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped p-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermo-activated diffusion of boron at 900-1000 degrees C. The latter process was found to increase the concentration of free holes in SiNWs up to (1-3) x 10(19) cm(-3). Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.
Описание
Ключевые слова
Цитирование
Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires / Efimova, A, I [et al.] // International Journal of Nanoscience. - 2019. - 18. - № 3-4. - 10.1142/S0219581X19400301
URI
https://www.doi.org/10.1142/S0219581X19400301
https://www.scopus.com/record/display.uri?eid=2-s2.0-85068173952&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472775200031
https://openrepository.mephi.ru/handle/123456789/18332
https://www.scopus.com/record/display.uri?eid=2-s2.0-85068173952&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472775200031
https://openrepository.mephi.ru/handle/123456789/18332