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Features of Upsets Formation in VLSI under Pulsed Ionizing Radiation

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dc.contributor.authorChumakov, A. I.
dc.contributor.authorЧумаков, Александр Иннокентьевич
dc.date.accessioned2025-09-25T16:21:46Z
dc.date.available2025-09-25T16:21:46Z
dc.date.issued2025
dc.format.extentС. 240-247
dc.identifier.citationChumakov, A. I. Features of Upsets Formation in VLSI under Pulsed Ionizing Radiation / Chumakov, A. I. // Russian Microelectronics. - 2025. - 54. - № 3. - P. 240-247. - 10.1134/S1063739725600360
dc.identifier.doi10.1134/S1063739725600360
dc.identifier.urihttps://www.doi.org/10.1134/S1063739725600360
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-105014878297&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/38605
dc.relation.ispartofRussian Microelectronics
dc.titleFeatures of Upsets Formation in VLSI under Pulsed Ionizing Radiation
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue3
oaire.citation.volume54
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relation.isAuthorOfPublication.latestForDiscovery43b0636e-accc-40f9-b290-f89ddec0684e
relation.isOrgUnitOfPublication543ffddb-d115-4466-be75-83b0f2c5a473
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