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Heavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area

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dc.contributor.authorGromova, P. S.
dc.contributor.authorDavydov, G. G.
dc.contributor.authorTararaksin, A. S.
dc.contributor.authorKolosova, A. S.
dc.contributor.authorBoychenko, D. V.
dc.contributor.authorДавыдов, Георгий Георгиевич
dc.contributor.authorТарараксин, Александр Сергеевич
dc.contributor.authorКолосова, Анна Сергеевна
dc.contributor.authorБойченко, Дмитрий Владимирович
dc.date.accessioned2024-11-21T14:57:17Z
dc.date.available2024-11-21T14:57:17Z
dc.date.issued2019
dc.description.abstract© 2019 IEEE.Heavy-ion-induced single event burnout (SEB) is studied experimentally for several types of 4H-SiC Schottky power diodes with various bias voltages applied. Safe operating voltage area for each type was defined and analyzed. The comparison with Si power devices was carried out.
dc.format.extentС. 71-74
dc.identifier.citationHeavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area / Gromova, P.S. [et al.] // 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. - 2019. - P. 71-74. - 10.1109/MIEL.2019.8889645
dc.identifier.doi10.1109/MIEL.2019.8889645
dc.identifier.urihttps://www.doi.org/10.1109/MIEL.2019.8889645
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075356079&origin=resultslist
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18921
dc.relation.ispartof2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
dc.titleHeavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area
dc.typeConference Paper
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