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MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors

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dc.contributor.authorLitvinov, A.
dc.contributor.authorEtrekova, M.
dc.contributor.authorPodlepetsky, B.
dc.contributor.authorSamotaev, N.
dc.contributor.authorOblov, K.
dc.contributor.authorЛитвинов, Артур Васильевич
dc.contributor.authorЭтрекова, Майя Оразгельдыевна
dc.contributor.authorПодлепецкий, Борис Иванович
dc.contributor.authorСамотаев, Николай Николаевич
dc.contributor.authorОблов, Константин Юрьевич
dc.date.accessioned2024-12-28T10:03:28Z
dc.date.available2024-12-28T10:03:28Z
dc.date.issued2023
dc.description.abstractThe features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta2O5/SiCn+/4H-SiC structures and two types of gas-sensitive electrodes were made: Palladium and Platinum. The effectiveness of using Platinum as an alternative to Palladium in the MOSFE-Capacitor (MOSFEC) gas sensors high-temperature design is evaluated. It is shown that, compared with Silicon, the use of Silicon Carbide increases the response rate, while maintaining the sensors high hydrogen sensitivity. The operating temperature and test signal frequency influence for measuring the sensor s capacitance on the sensitivity to H2 have been studied.
dc.identifier.citationMOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors / Litvinov, A. [et al.] // Sensors. - 2023. - 23. - № 7. - 10.3390/s23073760
dc.identifier.doi10.3390/s23073760
dc.identifier.urihttps://www.doi.org/10.3390/s23073760
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85152332144&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000968988400001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/30090
dc.relation.ispartofSensors
dc.subjectHumidity Sensors
dc.subjectGas Sensors
dc.subjectGas Sensing Mechanisms
dc.subjectChemical Sensors
dc.subjectPotentiometric Sensors
dc.subjectOperating temperature
dc.subjectHydrogen sensor
dc.titleMOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue7
oaire.citation.volume23
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