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Hole mobility in thieno[3,2-b]thiophene oligomers

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dc.contributor.authorMalov, V. V.
dc.contributor.authorGhosh, T.
dc.contributor.authorNair, V. C.
dc.contributor.authorUnni, K. N. N.
dc.contributor.authorMaslov, M. М.
dc.contributor.authorKatin, K. P.
dc.contributor.authorМаслов, Михаил Михайлович
dc.contributor.authorКатин, Константин Петрович
dc.date.accessioned2024-11-20T11:07:28Z
dc.date.available2024-11-20T11:07:28Z
dc.date.issued2019
dc.description.abstract© 2019 A study of transient and steady state electrical currents in the solution-processed thin films of thieno[3,2-b]thiophene oligomers has demonstrated charge carrier mobility of about 10 −2 cm 2 V −1 s −1 . Thieno[3,2-b]thiophene moieties serve as reasonable charge transport sites providing the high mobility. Varying end alkyl chains in such oligomers is suggested as a viable tool to tune the mobility.
dc.format.extentС. 218-219
dc.identifier.citationHole mobility in thieno[3,2-b]thiophene oligomers / Malov, V.V. [et al.] // Mendeleev Communications. - 2019. - 29. - № 2. - P. 218-219. - 10.1016/j.mencom.2019.03.035
dc.identifier.doi10.1016/j.mencom.2019.03.035
dc.identifier.urihttps://www.doi.org/10.1016/j.mencom.2019.03.035
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85064318197&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000467509600035
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16904
dc.relation.ispartofMendeleev Communications
dc.titleHole mobility in thieno[3,2-b]thiophene oligomers
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume29
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relation.isAuthorOfPublication04d8b4a2-cd20-4cb6-87ed-17a7a821d126
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