Publication:
The migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 °C

Простая страница элемента
dc.contributor.authorHlatshwayo, T. T.
dc.contributor.authorMokgadi, T. F.
dc.contributor.authorSohatsky, A.
dc.contributor.authorAbdalla, Z. A. Y.
dc.contributor.authorSkuratov, V. A.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-04T13:59:27Z
dc.date.available2024-12-04T13:59:27Z
dc.date.issued2024
dc.identifier.citationThe migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 °C / Hlatshwayo, T.T. [et al.] // Vacuum. - 2024. - 230. - 10.1016/j.vacuum.2024.113676
dc.identifier.doi10.1016/j.vacuum.2024.113676
dc.identifier.urihttps://www.doi.org/10.1016/j.vacuum.2024.113676
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85204709878&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/26311
dc.relation.ispartofVacuum
dc.titleThe migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 °C
dc.typeArticle
dspace.entity.typePublication
oaire.citation.volume230
relation.isAuthorOfPublicationa42d0cba-a1ca-4481-b526-7b326b53db08
relation.isAuthorOfPublication.latestForDiscoverya42d0cba-a1ca-4481-b526-7b326b53db08
relation.isOrgUnitOfPublicationba0b4738-e6bd-4285-bda5-16ab2240dbd1
relation.isOrgUnitOfPublication.latestForDiscoveryba0b4738-e6bd-4285-bda5-16ab2240dbd1
Файлы
Коллекции
Публикации