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Towards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets

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dc.contributor.authorHasebe, H.
dc.contributor.authorKido, K.
dc.contributor.authorTakenaka, H.
dc.contributor.authorMesuda, M.
dc.contributor.authorMigas, D. B.
dc.contributor.authorМигас, Дмитрий Борисович
dc.date.accessioned2024-12-28T08:11:56Z
dc.date.available2024-12-28T08:11:56Z
dc.date.issued2023
dc.identifier.citationTowards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets / Hasebe, H. [et al.] // Japanese Journal of Applied Physics. - 2023. - 62. - № SD. - 10.35848/1347-4065/aca4d7
dc.identifier.doi10.35848/1347-4065/aca4d7
dc.identifier.urihttps://www.doi.org/10.35848/1347-4065/aca4d7
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85145255768&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000922723400001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/29885
dc.relation.ispartofJapanese Journal of Applied Physics
dc.titleTowards B-doped p-BaSi2 films on Si substrates by co-sputtering of BaSi2, Ba, and B-doped Si targets
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issueSD
oaire.citation.volume62
relation.isAuthorOfPublicationdc98c820-584f-4046-a00f-18d91e02d7eb
relation.isAuthorOfPublication.latestForDiscoverydc98c820-584f-4046-a00f-18d91e02d7eb
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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