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Method for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects

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dc.contributor.authorRanneva, E. V.
dc.contributor.authorVerizhnikov, A. I.
dc.contributor.authorTsyrlov, A. M.
dc.contributor.authorFedosov, V. S.
dc.contributor.authorChernyak, M. E.
dc.contributor.authorUlanova, A. V.
dc.contributor.authorNikiforov, A. Y.
dc.contributor.authorKalashnikov, V. D.
dc.contributor.authorTitovets, D. O.
dc.contributor.authorУланова, Анастасия Владиславовна
dc.contributor.authorНикифоров, Александр Юрьевич
dc.contributor.authorКалашников, Владислав Дмитриевич
dc.contributor.authorТитовец, Дмитрий Олегович
dc.date.accessioned2024-11-21T17:25:41Z
dc.date.available2024-11-21T17:25:41Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd.Abstract: This paper is devoted to analyzing the effect of gamma radiation on the behavior of optocouplers. According to a series of experiments that involve masking various parts of a chip from X-ray irradiation, the most sensitive region of the chip is determined and the design of the optocoupler is improved. Upon modification, the radiation hardness of the device more than triples.
dc.format.extentС. 415-421
dc.identifier.citationMethod for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects / Ranneva, E.V. [et al.] // Russian Microelectronics. - 2019. - 48. - № 6. - P. 415-421. - 10.1134/S1063739719060039
dc.identifier.doi10.1134/S1063739719060039
dc.identifier.urihttps://www.doi.org/10.1134/S1063739719060039
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85077797170&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/19338
dc.relation.ispartofRussian Microelectronics
dc.titleMethod for Determining the Most Sensitive Region of an Optocoupler Chip under X-ray-Induced Dose Effects
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue6
oaire.citation.volume48
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