Publication:
Ionizing radiation dose sensor based on n-channel MOSFET

Простая страница элемента
dc.contributor.authorPodlepetsky, B.
dc.contributor.authorPershenkov, V. S.
dc.contributor.authorBelyakov, V. V.
dc.contributor.authorBakerenkov, A. S.
dc.contributor.authorFelitsyn, V. A.
dc.contributor.authorRodin, A. S.
dc.contributor.authorПодлепецкий, Борис Иванович
dc.contributor.authorБеляков, Владимир Васильевич
dc.contributor.authorБакеренков, Александр Сергеевич
dc.contributor.authorРодин, Александр Сергеевич
dc.date.accessioned2024-11-25T15:03:56Z
dc.date.available2024-11-25T15:03:56Z
dc.date.issued2020
dc.description.abstract© Springer Nature Switzerland AG 2020.We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-based dosimeter as function of the radiation doses at const values of the drain current ID and the drain—source voltage VD (conversion functions), as well as the (ID − VG) characteristics before, during and after irradiations at different temperatures. It was shown how the conversion functions and the radiation sensitivities are depending on the temperature and electrical modes. It is found that the conversion functions V(D) have two characteristic regions for low and high doses (with negative and with positive radiation sensitivities). To interpret experimental data there were proposed the models of conversion function and its components taking into account the separate contributions of charges in the dielectric and in SiO2–Si interface.
dc.format.extentС. 399-404
dc.identifier.citationIonizing radiation dose sensor based on n-channel MOSFET / Podlepetsky, B.I. [et al.] // IFMBE Proceedings. - 2020. - 77. - P. 399-404. - 10.1007/978-3-030-31866-6_73
dc.identifier.doi10.1007/978-3-030-31866-6_73
dc.identifier.urihttps://www.doi.org/10.1007/978-3-030-31866-6_73
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85075602284&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000552314200073
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20072
dc.relation.ispartofIFMBE Proceedings
dc.titleIonizing radiation dose sensor based on n-channel MOSFET
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume77
relation.isAuthorOfPublication11795ead-c59a-47cf-bae1-ccbff5788e69
relation.isAuthorOfPublicatione931152d-aeb9-452a-bf37-27ce50e49743
relation.isAuthorOfPublication94c8e0af-bcfa-4504-b666-96bdb9ac29c0
relation.isAuthorOfPublicationf9beddc3-c5bd-41d0-afb6-e9a18478961a
relation.isAuthorOfPublication.latestForDiscovery11795ead-c59a-47cf-bae1-ccbff5788e69
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
Файлы
Коллекции
Публикации