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Rationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below

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dc.contributor.authorFomina, A. V.
dc.contributor.authorFrantsuzova, V. V.
dc.contributor.authorPetrenko, Ya. I.
dc.contributor.authorKornachev, D. V.
dc.contributor.authorAvanesyan, A. R.
dc.contributor.authorФомина, Алёна Владимировна
dc.contributor.authorАванесян, Александра Ромиковна
dc.contributor.otherФакультет бизнес-информатики и управления комплексными системами
dc.date.accessioned2024-11-21T08:23:24Z
dc.date.available2024-11-21T08:23:24Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. This article describes the systemic problem of the development of the Russian semiconductor industry due to the lack of national production of integrated microcircuits with topological standards below 65 nm. Here are the results of the analysis of the feasibility of production lines of integrated circuits developing, depending on the forecasted volume of demand for various categories of semiconductor products, the technological backlog of Russian organizations and the estimated cost of the project. In this article, there are suggestions on possible sources of project financing and measures of non-financial support. Also, it describes the general technological parameters of the created production. It contains an assessment of key performance indicators of the project and the impact of its implementation on related technological areas.
dc.identifier.citationRationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below / Fomina, A.V. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012043
dc.identifier.doi10.1088/1757-899X/498/1/012043
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012043
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065594081&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800043
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17952
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleRationale of the need to the development of semiconductor industry in Russia with the 28 nanometer semiconductor device fabrication node and below
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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