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Creation of Thin Films of NbN at Room Temperature of the Substrate

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dc.contributor.authorGurovich, B. A.
dc.contributor.authorGoncharov, B. V.
dc.contributor.authorKutuzov, L. V.
dc.contributor.authorStolyarov, L. V.
dc.contributor.authorPrikhod'ko, K. E.
dc.contributor.authorПриходько, Кирилл Евгеньевич
dc.date.accessioned2024-11-30T01:23:02Z
dc.date.available2024-11-30T01:23:02Z
dc.date.issued2021
dc.description.abstract© 2021, Pleiades Publishing, Ltd.Abstract: Magnetron sputtering is used for preparing thin NbN films. The films are deposited on sapphire substrates at temperatures from 20 to 300°C. The superconducting transition temperature for various samples is in the range of 8–14 K depending on the substrate temperature during deposition. The critical current density jc is in the range of 0.8–8 MA/cm2, which makes it possible to use these films to create multilayer structures due to the absence of anneals, which each underlying layer of structures is subjected to during the deposition of each subsequent layer.
dc.identifier.citationCreation of Thin Films of NbN at Room Temperature of the Substrate / Gurovich, B.A. [et al.] // Physics of the Solid State. - 2021. - 10.1134/S1063783421090092
dc.identifier.doi10.1134/S1063783421090092
dc.identifier.urihttps://www.doi.org/10.1134/S1063783421090092
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dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/25180
dc.relation.ispartofPhysics of the Solid State
dc.titleCreation of Thin Films of NbN at Room Temperature of the Substrate
dc.typeArticle
dspace.entity.typePublication
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