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Total dose measurements by p-channel transistors of ICs

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dc.contributor.authorButin, I. V.
dc.contributor.authorButina, A. V.
dc.contributor.authorButin, V. I.
dc.contributor.authorБутин, Валентин Иванович
dc.date.accessioned2024-11-21T08:33:02Z
dc.date.available2024-11-21T08:33:02Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. In this paper, a new approach of p-channel MOS-transistors used for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for the MOSFETs electro-physical model of dose effects. We propose to calculate the total dose of ionization flux using the results of MOS-transistors drain current measurements, under a fixed gate and drain voltage.
dc.identifier.citationButin, I. V. Total dose measurements by p-channel transistors of ICs / Butin, I.V., Butina, A.V., Butin, V.I. // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012007
dc.identifier.doi10.1088/1757-899X/498/1/012007
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012007
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065577587&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800007
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17999
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleTotal dose measurements by p-channel transistors of ICs
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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