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A New Approach of Simulating Low-Dose-Rate Radiation Effects in Bipolar Integrated Circuits

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dc.contributor.authorChumakov, A. I.
dc.contributor.authorЧумаков, Александр Иннокентьевич
dc.date.accessioned2024-12-04T11:32:09Z
dc.date.available2024-12-04T11:32:09Z
dc.date.issued2024
dc.format.extentС. 154-160
dc.identifier.citationChumakov, A. I. A New Approach of Simulating Low-Dose-Rate Radiation Effects in Bipolar Integrated Circuits / Chumakov, A.I. // Russian Microelectronics. - 2024. - 53. - № 2. - P. 154-160. - 10.1134/S1063739723600966
dc.identifier.doi10.1134/S1063739723600966
dc.identifier.urihttps://www.doi.org/10.1134/S1063739723600966
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85195408346&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/26045
dc.relation.ispartofRussian Microelectronics
dc.titleA New Approach of Simulating Low-Dose-Rate Radiation Effects in Bipolar Integrated Circuits
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume53
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relation.isAuthorOfPublication.latestForDiscovery43b0636e-accc-40f9-b290-f89ddec0684e
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relation.isOrgUnitOfPublication.latestForDiscovery543ffddb-d115-4466-be75-83b0f2c5a473
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