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Temperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN

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dc.contributor.authorShostachenko, S. A.
dc.contributor.authorPorokhonko, Y. A.
dc.contributor.authorZakharchenko, R. V.
dc.contributor.authorLeshchev, S. V.
dc.contributor.authorMaslov, M. M.
dc.contributor.authorKatin, K. P.
dc.contributor.authorЗахарченко, Роман Викторович
dc.contributor.authorЛещев, Сергей Валерьевич
dc.contributor.authorМаслов, Михаил Михайлович
dc.contributor.authorКатин, Константин Петрович
dc.date.accessioned2024-11-21T08:22:56Z
dc.date.available2024-11-21T08:22:56Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of the AlGaN/GaN transistor heterostructure based on Ti/Al/Ni/Au metallization. The Al-Ti-N system has been assessed on the basis of available thermodynamic descriptions for binary subsystems. The effect of annealing temperature on the specific resistance of Ohmic contact was studied.
dc.identifier.citationTemperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN / Shostachenko, S.A. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012019
dc.identifier.doi10.1088/1757-899X/498/1/012019
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012019
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065596218&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800019
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17950
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleTemperature influence on process of Ti/Al/Ni/Au contact formation to heterostructure AlGaN/GaN
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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