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Effect of the active mode NMOS-transistor irradiated on formation of surface defects

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dc.contributor.authorPetukhov, K. A.
dc.contributor.authorPopov, V. D.
dc.contributor.authorПопов, Виктор Дмитриевич
dc.date.accessioned2024-11-21T08:25:18Z
dc.date.available2024-11-21T08:25:18Z
dc.date.issued2019
dc.description.abstract© 2019 Published under licence by IOP Publishing Ltd. The results of experiment on irradiation CMOS integrated circuits are presented at dose rate 0,1 rad/s with in electric and passive modes. Two stages of surface defects formation in both cases were observed.
dc.identifier.citationPetukhov, K. A. Effect of the active mode NMOS-transistor irradiated on formation of surface defects / Petukhov, K.A., Popov, V.D. // IOP Conference Series: Materials Science and Engineering. - 2019. - 498. - № 1. - 10.1088/1757-899X/498/1/012016
dc.identifier.doi10.1088/1757-899X/498/1/012016
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/498/1/012016
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85065572702&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000472784800016
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17961
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleEffect of the active mode NMOS-transistor irradiated on formation of surface defects
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume498
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