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Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

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dc.contributor.authorBaglov, A. V.
dc.contributor.authorChubenko, E. B.
dc.contributor.authorHnitsko, A. A.
dc.contributor.authorBorisenko, V. E.
dc.date.accessioned2024-11-25T17:06:48Z
dc.date.available2024-11-25T17:06:48Z
dc.date.issued2020
dc.description.abstractInterrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400 degrees C to 625 degrees C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625 degrees C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
dc.format.extentС. 228-232
dc.identifier.citationStructural and Photoluminescence Properties of Graphite-Like Carbon Nitride / Baglov, AV [et al.] // Semiconductors. - 2020. - 54. - № 2. - P. 228-232. - 10.1134/S1063782620020049
dc.identifier.doi10.1134/S1063782620020049
dc.identifier.urihttps://www.doi.org/10.1134/S1063782620020049
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85081570253&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000518802600013
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/20417
dc.relation.ispartofSemiconductors
dc.titleStructural and Photoluminescence Properties of Graphite-Like Carbon Nitride
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume54
relation.isOrgUnitOfPublication06e1796d-4f55-4057-8d7e-bb2f3b5676f5
relation.isOrgUnitOfPublication.latestForDiscovery06e1796d-4f55-4057-8d7e-bb2f3b5676f5
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