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Electron-Quantum Transport in Pseudomorphic and Metamorphic In 0.2 Ga 0.8 As-Based Quantum Wells

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dc.contributor.authorVinichenko, A. N.
dc.contributor.authorSafonov, D. A.
dc.contributor.authorKargin, N. I.
dc.contributor.authorVasil'evskii, I. S.
dc.contributor.authorВиниченко, Александр Николаевич
dc.contributor.authorСафонов, Данил Андреевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorВасильевский, Иван Сергеевич
dc.date.accessioned2024-11-21T08:08:24Z
dc.date.available2024-11-21T08:08:24Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd. Abstract: Metamorphic high-electron-mobility transistor (HEMT) structures based on deep In 0.2 Ga 0.8 As/In 0.2 Al 0.8 As quantum wells (0.7 eV for Γ electrons) with different metamorphic buffer designs are implemented and investigated for the first time. The electronic properties of metamorphic and pseudomorphic HEMT structures with the same doping are compared. It is found that, over a temperature range of 4–300 K, both the electron mobility and concentration in the HEMT structure with a linear metamorphic buffer are higher than those in the pseudomorphic HEMT structure due to an increase in the depth of the quantum well. Low-temperature magnetotransport measurements demonstrate that the quantum momentum-relaxation time decreases considerably in metamorphic HEMT structures because of enhanced small-angle scattering resulting from structural defects and inhomogeneities, while the dominant scattering mechanism in structures of both types is still due to remote ionized impurities.
dc.format.extentС. 339-344
dc.identifier.citationElectron-Quantum Transport in Pseudomorphic and Metamorphic In 0.2 Ga 0.8 As-Based Quantum Wells / Vinichenko, A.N. [et al.] // Semiconductors. - 2019. - 53. - № 3. - P. 339-344. - 10.1134/S1063782619030205
dc.identifier.doi10.1134/S1063782619030205
dc.identifier.urihttps://www.doi.org/10.1134/S1063782619030205
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85064933920&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000465525000011
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/17866
dc.relation.ispartofSemiconductors
dc.titleElectron-Quantum Transport in Pseudomorphic and Metamorphic In 0.2 Ga 0.8 As-Based Quantum Wells
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue3
oaire.citation.volume53
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