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Gallium Nitride FET Model

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dc.contributor.authorOrlov, V. V.
dc.contributor.authorZebrev, G. I.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-20T09:50:10Z
dc.date.available2024-11-20T09:50:10Z
dc.date.issued2019
dc.description.abstract© Published under licence by IOP Publishing Ltd. We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the source-drain resistance, different interface trap densities and self-heating effects.
dc.identifier.citationOrlov, V. V. Gallium Nitride FET Model / Orlov, V.V., Zebrev, G.I. // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012007
dc.identifier.doi10.1088/1757-899X/475/1/012007
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/475/1/012007
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85062726265&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16658
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleGallium Nitride FET Model
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume475
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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