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Single Event Burnout Sensitivity Prediction Based on Commercial MOSFET Electrical Characteristics Analysis

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dc.contributor.authorKessarinskiy, V. S.
dc.contributor.authorKessarinskiy, L. N.
dc.contributor.authorTararaksin, A. S.
dc.contributor.authorShirin, A. O.
dc.contributor.authorBoychenko, D. V.
dc.contributor.authorКессаринский, Леонид Николаевич
dc.contributor.authorТарараксин, Александр Сергеевич
dc.contributor.authorШирин, Алексей Олегович
dc.contributor.authorБойченко, Дмитрий Владимирович
dc.date.accessioned2024-11-29T16:30:43Z
dc.date.available2024-11-29T16:30:43Z
dc.date.issued2021
dc.description.abstract© 2021 IEEE.Power MOSFET transistors are the main part of the power supply system for any equipment, including spacecraft. Modern vertical MOSFETs are designed as regular matrix structures of elementary parallel cells (mini-transistors), made according to submicron process. Single event burnout (SEB) of a vertical cell is the main mechanism for failure of vertical MOSFETs from single particle effect. In addition to SEB, there are several other reasons for the MOSFET burnout, caused by extremal bias, that are tested during manufacturing. The MOSFETs SEB sensitivity prediction model is presented. The model is based on the analysis of burnout bias characteristics from the datasheets. The comparison of experimental data and model prediction results is presented in the article. The figure of merit (FOM) for SEB sensitivity prediction is proposed. The optimal value of FOM for n-MOSFETs and LET 40 MeV cm2/mg is presented. So, the model helps to determine the most sensitive MOSFET transistors before expensive testing done.
dc.identifier.citationSingle Event Burnout Sensitivity Prediction Based on Commercial MOSFET Electrical Characteristics Analysis / Kessarinskiy, V.S. [et al.] // SIBCON 2021 - International Siberian Conference on Control and Communications. - 2021. - 10.1109/SIBCON50419.2021.9438864
dc.identifier.doi10.1109/SIBCON50419.2021.9438864
dc.identifier.urihttps://www.doi.org/10.1109/SIBCON50419.2021.9438864
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85107629165&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000680842100015
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24215
dc.relation.ispartofSIBCON 2021 - International Siberian Conference on Control and Communications
dc.titleSingle Event Burnout Sensitivity Prediction Based on Commercial MOSFET Electrical Characteristics Analysis
dc.typeConference Paper
dspace.entity.typePublication
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