Publication: Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface
Дата
2019
Авторы
Meaney, S.
Jones, A.
Fedoseev, S. A.
Pan, A. V.
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Volume Title
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Аннотация
© 2019 Author(s).High quality robust two-dimensional electron gas (2DEG) LaAlO3/SrTiO3 (LAO/STO) interfaces are produced using pulsed laser deposition and an acid-free substrate Ti-Termination process, resulting in single unit cell terraces. Temperature dependent resistance measurements show two hysteresis anomalies around 80 K and 160 K. By using Hall measurements, we find an Arrhenius dependence in charge carrier density describing a partial carrier freeze-out below ∼80 K. We show that these two resistance anomalies are unrelated to the temperature dependence of the charge carrier density despite the tempting coincidence of the low temperature hysteresis feature and the freeze-out process. A two-carrier model is required to accurately estimate the activation energy of the thermally activated type charge carriers, which are found to be ∼5 to 7 meV. These results support the theory that oxygen vacancy defects contribute to the metallic conductivity at the 2DEG LAO/STO interface even for annealed samples.
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Цитирование
Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface / Meaney, S. [et al.] // APL Materials. - 2019. - 7. - № 10. - 10.1063/1.5112804
URI
https://www.doi.org/10.1063/1.5112804
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https://openrepository.mephi.ru/handle/123456789/18769
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https://openrepository.mephi.ru/handle/123456789/18769