Publication:
Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface

dc.contributor.authorMeaney, S.
dc.contributor.authorJones, A.
dc.contributor.authorFedoseev, S. A.
dc.contributor.authorPan, A. V.
dc.date.accessioned2024-11-21T12:32:34Z
dc.date.available2024-11-21T12:32:34Z
dc.date.issued2019
dc.description.abstract© 2019 Author(s).High quality robust two-dimensional electron gas (2DEG) LaAlO3/SrTiO3 (LAO/STO) interfaces are produced using pulsed laser deposition and an acid-free substrate Ti-Termination process, resulting in single unit cell terraces. Temperature dependent resistance measurements show two hysteresis anomalies around 80 K and 160 K. By using Hall measurements, we find an Arrhenius dependence in charge carrier density describing a partial carrier freeze-out below ∼80 K. We show that these two resistance anomalies are unrelated to the temperature dependence of the charge carrier density despite the tempting coincidence of the low temperature hysteresis feature and the freeze-out process. A two-carrier model is required to accurately estimate the activation energy of the thermally activated type charge carriers, which are found to be ∼5 to 7 meV. These results support the theory that oxygen vacancy defects contribute to the metallic conductivity at the 2DEG LAO/STO interface even for annealed samples.
dc.identifier.citationPartial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface / Meaney, S. [et al.] // APL Materials. - 2019. - 7. - № 10. - 10.1063/1.5112804
dc.identifier.doi10.1063/1.5112804
dc.identifier.urihttps://www.doi.org/10.1063/1.5112804
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85073631749&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000509790200012
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18769
dc.relation.ispartofAPL Materials
dc.titlePartial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue10
oaire.citation.volume7
relation.isOrgUnitOfPublicationdcdb137c-0528-46a5-841b-780227a67cce
relation.isOrgUnitOfPublication.latestForDiscoverydcdb137c-0528-46a5-841b-780227a67cce
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