Publication: Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface
| dc.contributor.author | Meaney, S. | |
| dc.contributor.author | Jones, A. | |
| dc.contributor.author | Fedoseev, S. A. | |
| dc.contributor.author | Pan, A. V. | |
| dc.date.accessioned | 2024-11-21T12:32:34Z | |
| dc.date.available | 2024-11-21T12:32:34Z | |
| dc.date.issued | 2019 | |
| dc.description.abstract | © 2019 Author(s).High quality robust two-dimensional electron gas (2DEG) LaAlO3/SrTiO3 (LAO/STO) interfaces are produced using pulsed laser deposition and an acid-free substrate Ti-Termination process, resulting in single unit cell terraces. Temperature dependent resistance measurements show two hysteresis anomalies around 80 K and 160 K. By using Hall measurements, we find an Arrhenius dependence in charge carrier density describing a partial carrier freeze-out below ∼80 K. We show that these two resistance anomalies are unrelated to the temperature dependence of the charge carrier density despite the tempting coincidence of the low temperature hysteresis feature and the freeze-out process. A two-carrier model is required to accurately estimate the activation energy of the thermally activated type charge carriers, which are found to be ∼5 to 7 meV. These results support the theory that oxygen vacancy defects contribute to the metallic conductivity at the 2DEG LAO/STO interface even for annealed samples. | |
| dc.identifier.citation | Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface / Meaney, S. [et al.] // APL Materials. - 2019. - 7. - № 10. - 10.1063/1.5112804 | |
| dc.identifier.doi | 10.1063/1.5112804 | |
| dc.identifier.uri | https://www.doi.org/10.1063/1.5112804 | |
| dc.identifier.uri | https://www.scopus.com/record/display.uri?eid=2-s2.0-85073631749&origin=resultslist | |
| dc.identifier.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000509790200012 | |
| dc.identifier.uri | https://openrepository.mephi.ru/handle/123456789/18769 | |
| dc.relation.ispartof | APL Materials | |
| dc.title | Partial carrier freeze-out at the LaAlO3/SrTiO3 oxide interface | |
| dc.type | Article | |
| dspace.entity.type | Publication | |
| oaire.citation.issue | 10 | |
| oaire.citation.volume | 7 | |
| relation.isOrgUnitOfPublication | dcdb137c-0528-46a5-841b-780227a67cce | |
| relation.isOrgUnitOfPublication.latestForDiscovery | dcdb137c-0528-46a5-841b-780227a67cce |
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