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Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV

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dc.contributor.authorVolkov, N. V.
dc.contributor.authorSafonov, D. A.
dc.date.accessioned2024-11-21T08:51:47Z
dc.date.available2024-11-21T08:51:47Z
dc.date.issued2019
dc.description.abstract© 2019, Pleiades Publishing, Ltd.Abstract: The peculiarities of the surface topography that arise as a result of the sputtering of Si single-crystal substrates of different orientations with sputtered thin films under irradiation with Ar+ and He+ ion beams with energies in a broad energy range are considered. It is shown that the modified-layer thickness depends significantly on the irradiation dose. The best surface homogeneity of a Si single crystal with different orientations can be reached under simultaneous irradiation with Ar+ and He+ ions in a ratio that is close to 1 : 1.
dc.format.extentС. 199-201
dc.identifier.citationVolkov, N. V. Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV / Volkov, N.V., Safonov, D.A. // Journal of Surface Investigation. - 2019. - 13. - № 2. - P. 199-201. - 10.1134/S1027451019020204
dc.identifier.doi10.1134/S1027451019020204
dc.identifier.urihttps://www.doi.org/10.1134/S1027451019020204
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85066116641&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468811200007
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/18083
dc.relation.ispartofJournal of Surface Investigation
dc.titleSputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue2
oaire.citation.volume13
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relation.isOrgUnitOfPublication.latestForDiscoveryba0b4738-e6bd-4285-bda5-16ab2240dbd1
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