Publication: Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV
Дата
2019
Авторы
Volkov, N. V.
Safonov, D. A.
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Аннотация
© 2019, Pleiades Publishing, Ltd.Abstract: The peculiarities of the surface topography that arise as a result of the sputtering of Si single-crystal substrates of different orientations with sputtered thin films under irradiation with Ar+ and He+ ion beams with energies in a broad energy range are considered. It is shown that the modified-layer thickness depends significantly on the irradiation dose. The best surface homogeneity of a Si single crystal with different orientations can be reached under simultaneous irradiation with Ar+ and He+ ions in a ratio that is close to 1 : 1.
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Volkov, N. V. Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV / Volkov, N.V., Safonov, D.A. // Journal of Surface Investigation. - 2019. - 13. - № 2. - P. 199-201. - 10.1134/S1027451019020204
URI
https://www.doi.org/10.1134/S1027451019020204
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https://openrepository.mephi.ru/handle/123456789/18083
https://www.scopus.com/record/display.uri?eid=2-s2.0-85066116641&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000468811200007
https://openrepository.mephi.ru/handle/123456789/18083