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A linear "extrinsic" compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime

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dc.contributor.authorTurin, V.
dc.contributor.authorShkarlat, R.
dc.contributor.authorPoyarkov, V.
dc.contributor.authorKshensky, O.
dc.contributor.authorZebrev, G.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-20T10:38:47Z
dc.date.available2024-11-20T10:38:47Z
dc.date.issued2019
dc.description.abstract© 2019 SPIE. We derived the equation for the drain current of a short-channel MOSFET with nonzero differential conductance in saturation regime describing its nonlinear dependence on "extrinsic" drain bias and accounting for the parasitic and contact series resistances. This implicit equation could be numerically solved in the entire range of the drain biases. We have also derived the equation for the differential conductance of the "extrinsic" MOSFET in the saturation regime. Finally, we have proposed a linear approximation for asymptotic dependence of the "extrinsic" MOSFET drain current on "extrinsic" drain bias in saturation regime.
dc.identifier.citationA linear "extrinsic" compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime / Turin, V. [et al.] // Proceedings of SPIE - The International Society for Optical Engineering. - 2019. - 11022. - 10.1117/12.2521880
dc.identifier.doi10.1117/12.2521880
dc.identifier.urihttps://www.doi.org/10.1117/12.2521880
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85063527385&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000464735700016
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16776
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering
dc.titleA linear "extrinsic" compact model for short-channel MOSFET drain current asymptotic dependence on drain bias in saturation regime
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume11022
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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