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Accounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs

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dc.contributor.authorTurin, V. O.
dc.contributor.authorIlyushina, Y. V.
dc.contributor.authorShcherbina, M. A.
dc.contributor.authorRakhmatov, B. A.
dc.contributor.authorZebrev, G. I.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-12-27T15:19:51Z
dc.date.available2024-12-27T15:19:51Z
dc.date.issued2023
dc.format.extentС. S6-S13
dc.identifier.citationAccounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs / Turin, V. O. [et al.] // Russian Microelectronics. - 2023. - 52. - № Suppl 1. - P. S6-S13. - 10.1134/S1063739723600814
dc.identifier.doi10.1134/S1063739723600814
dc.identifier.urihttps://www.doi.org/10.1134/S1063739723600814
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85188520665&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/29782
dc.relation.ispartofRussian Microelectronics
dc.titleAccounting for Carrier Mobility Reduction due to the Normal Field in the Saturation Current Modeling of Extrinsic MOSFETs
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issueSuppl 1
oaire.citation.volume52
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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