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An Accurate Analytical Modeling of Contact Resistances in MOSFETs

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dc.contributor.authorTurin, V. O.
dc.contributor.authorBokitko, G. D.
dc.contributor.authorMalich, D. S.
dc.contributor.authorZebrev, G. I.
dc.contributor.authorЗебрев, Геннадий Иванович
dc.date.accessioned2024-11-29T22:34:42Z
dc.date.available2024-11-29T22:34:42Z
dc.date.issued2021
dc.description.abstract© 2021 IEEE.We have presented an analytical physics-based model, which can continually describe the MOSFET I- V curves in all operation modes taking into account the finite source-drain resistances.
dc.format.extentС. 97-99
dc.identifier.citationAn Accurate Analytical Modeling of Contact Resistances in MOSFETs / Turin, V.O. [et al.] // Proceedings of the International Conference on Microelectronics, ICM. - 2021. - 2021-September. - P. 97-99. - 10.1109/MIEL52794.2021.9569104
dc.identifier.doi10.1109/MIEL52794.2021.9569104
dc.identifier.urihttps://www.doi.org/10.1109/MIEL52794.2021.9569104
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85118441082&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/24913
dc.relation.ispartofProceedings of the International Conference on Microelectronics, ICM
dc.titleAn Accurate Analytical Modeling of Contact Resistances in MOSFETs
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.volume2021-September
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relation.isAuthorOfPublication.latestForDiscovery480f2f5c-4a04-4b0c-9e47-55e54fc07c4f
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