Publication: Superluminescent diodes in the spectral range of 1.5 1.6 mu m based on strain-compensated AlGaInAs/InP quantum wells
Дата
2020
Авторы
Sabitov, D. R.
Ryaboshtan, Y. L.
Svetogorov, V. N.
Padalitsa, A. A.
Marmalyuk, A. A.
Journal Title
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Volume Title
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Аннотация
Superluminescent diodes based on AlGaInAs/InP separate-confinement double heterostructures with strain-compensated quantum wells are investigated. The influence of elastic strains in the active region on the output characteristics of the devices is analysed. It is shown that such a design of a superluminescent diode allows an optical power of more than 5 mW, a radiation spectrum width of more than 60 nm, a degree of output radiation polarisation up to 30 dB to be obtained at the output of a single-mode fibre, and has a great potential for further improvement.
Описание
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Цитирование
Superluminescent diodes in the spectral range of 1.5 1.6 mu m based on strain-compensated AlGaInAs/InP quantum wells / Sabitov, DR [et al.] // Quantum Electronics. - 2020. - 50. - № 9. - P. 830-833. - 10.1070/QEL17376
URI
https://www.doi.org/10.1070/QEL17376
https://www.scopus.com/record/display.uri?eid=2-s2.0-85092359866&origin=resultslist
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https://openrepository.mephi.ru/handle/123456789/22328
https://www.scopus.com/record/display.uri?eid=2-s2.0-85092359866&origin=resultslist
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000565366500005
https://openrepository.mephi.ru/handle/123456789/22328