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Modelling of track formation in nanocrystalline inclusions in Si3N4

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dc.contributor.authorRymzhanov, R. A.
dc.contributor.authorVolkov, A. E.
dc.contributor.authorZhalmagambetova, A.
dc.contributor.authorZhumazhanova, A.
dc.contributor.authorSkuratov, V.
dc.contributor.authorDauletbekova, A. K.
dc.contributor.authorAkilbekov, A. T.
dc.contributor.authorСкуратов, Владимир Алексеевич
dc.date.accessioned2024-12-25T16:36:31Z
dc.date.available2024-12-25T16:36:31Z
dc.date.issued2022
dc.description.abstractA multiscale modeling is applied to investigate structural changes caused by impacts of swift heavy ions in Si3N4 nanoclusters imbedded into amorphous and crystalline silicon nitride matrices. The approach combines the Monte Carlo code TREKIS describing the excitation kinetics of electronic and atomic subsystems and a classical molecular dynamics tracing subsequent relaxation of lattice atoms. Ion impacts in amorphous and crystalline Si3N4 result in formation of a cylindrical amorphous region of a reduced material density, surrounded by a shell with an increased density. The track diameter inside a nanosized inclusion in crystalline or amorphous matrices was found smaller than in surrounding materials, which can be explained by a heat confinement by grain boundaries. © 2022 Author(s).
dc.identifier.citationModelling of track formation in nanocrystalline inclusions in Si3N4 / Rymzhanov, R.A. [et al.] // Journal of Applied Physics. - 2022. - 132. - № 8. - 10.1063/5.0098432
dc.identifier.doi10.1063/5.0098432
dc.identifier.urihttps://www.doi.org/10.1063/5.0098432
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85137076842&origin=resultslist
dc.identifier.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000844404200001
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/28200
dc.relation.ispartofJournal of Applied Physics
dc.titleModelling of track formation in nanocrystalline inclusions in Si3N4
dc.typeArticle
dspace.entity.typePublication
oaire.citation.issue8
oaire.citation.volume132
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