Publication:
Modelling of track formation in nanocrystalline inclusions in Si3N4

Дата
2022
Авторы
Rymzhanov, R. A.
Volkov, A. E.
Zhalmagambetova, A.
Zhumazhanova, A.
Skuratov, V.
Dauletbekova, A. K.
Akilbekov, A. T.
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Научные группы
Организационные подразделения
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Организационная единица
Институт ядерной физики и технологий
Цель ИЯФиТ и стратегия развития - создание и развитие научно-образовательного центра мирового уровня в области ядерной физики и технологий, радиационного материаловедения, физики элементарных частиц, астрофизики и космофизики.
Выпуск журнала
Аннотация
A multiscale modeling is applied to investigate structural changes caused by impacts of swift heavy ions in Si3N4 nanoclusters imbedded into amorphous and crystalline silicon nitride matrices. The approach combines the Monte Carlo code TREKIS describing the excitation kinetics of electronic and atomic subsystems and a classical molecular dynamics tracing subsequent relaxation of lattice atoms. Ion impacts in amorphous and crystalline Si3N4 result in formation of a cylindrical amorphous region of a reduced material density, surrounded by a shell with an increased density. The track diameter inside a nanosized inclusion in crystalline or amorphous matrices was found smaller than in surrounding materials, which can be explained by a heat confinement by grain boundaries. © 2022 Author(s).
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Цитирование
Modelling of track formation in nanocrystalline inclusions in Si3N4 / Rymzhanov, R.A. [et al.] // Journal of Applied Physics. - 2022. - 132. - № 8. - 10.1063/5.0098432
URI
https://www.doi.org/10.1063/5.0098432
 https://www.scopus.com/record/display.uri?eid=2-s2.0-85137076842&origin=resultslist
 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS_CPL&DestLinkType=FullRecord&UT=WOS:000844404200001
 https://openrepository.mephi.ru/handle/123456789/28200
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