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Influence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures

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dc.contributor.authorSafonov, D. A.
dc.contributor.authorVinichenko, A. N.
dc.contributor.authorKargin, N. I.
dc.contributor.authorVasil'Evskii, I. S.
dc.contributor.authorСафонов, Данил Андреевич
dc.contributor.authorВиниченко, Александр Николаевич
dc.contributor.authorКаргин, Николай Иванович
dc.contributor.authorВасильевский, Иван Сергеевич
dc.date.accessioned2024-11-20T09:50:59Z
dc.date.available2024-11-20T09:50:59Z
dc.date.issued2019
dc.description.abstract© Published under licence by IOP Publishing Ltd. Electron transport in single delta-Si doped pseudomorphic quantum wells with increasing donor concentration analyzed in a temperature range 2-300K. Hall effect and Shubnikov-de Haas oscillations studied at low temperatures. Temperature dependences of electron sheet concentration differ: samples with higher doping show significant increase of electron consentration at high temperature, while for the lightly doped it has a minor temperature sensitivity due to the band peculiarities of donor ionization. Electron mobility increases and then decreases at higher electron concentration, although the second quantum well subband remains unpopulated.
dc.identifier.citationInfluence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures / Safonov, D.A. [et al.] // IOP Conference Series: Materials Science and Engineering. - 2019. - 475. - № 1. - 10.1088/1757-899X/475/1/012034
dc.identifier.doi10.1088/1757-899X/475/1/012034
dc.identifier.urihttps://www.doi.org/10.1088/1757-899X/475/1/012034
dc.identifier.urihttps://www.scopus.com/record/display.uri?eid=2-s2.0-85062694923&origin=resultslist
dc.identifier.urihttps://openrepository.mephi.ru/handle/123456789/16663
dc.relation.ispartofIOP Conference Series: Materials Science and Engineering
dc.titleInfluence of silicon donor doping on electron transport in quantum wells AlGaAs/InGaAs/GaAs at different temperatures
dc.typeConference Paper
dspace.entity.typePublication
oaire.citation.issue1
oaire.citation.volume475
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